BUL76B
BUL76B is NPN Transistor manufactured by Seme LAB.
FEATURES
- Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
- Triple Guard Rings for improved control of high voltages.
2.54 2.54
TO-220
Pin 1
- Base Pin 2
- Collector Pin 3
- Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector
- Base Voltage(IE=0) Collector
- Emitter Voltage (IB = 0) Emitter
- Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase = 25°C Junction Temperature Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
250V 100V 10V 70A 14A 85W 150°C
- 55 to +150°C
Prelim. 2/97
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
Test Conditions
Min.
100 250 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector
- Emitter Sustaining Voltage IC = 100m A Collector
- Base Breakdown Voltage Emitter
- Base Breakdown Voltage Collector
- Base Cut- Off Current Collector
- Emitter Cut- Off Current Emitter Cut- Off Current IC = 1m A IE = 1m A VCB = 240V TC = 125°C VCE = 90V VEB = 9V TC = 125°C IC = 1A VCE = 1V VCE = 1V VCE = 5V VCE = 5V IB = 1A IB = 2A IB = 4A IB = 1A IB = 2A VCE = 4V f = 1MHz
V 10 100 100 10 100
µA µA µA
45 25 50 40
90 60 80 70 0.5 0.8 0.7 1.2 1.5 20 200 V...
