Seme LAB BUL76B
NPN Transistor
| Part No. | BUL76B |
|---|---|
| Datasheet | BUL76B Download |
| Manufacturer |  Seme LAB |
| Description | NPN Transistor |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm 10.2 1.3 4.5 SEME BUL76B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85●
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● 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING
FEATURES
● Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.● Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
● Triple Guard Rings for improved control of high voltages. 2.54 2.54 TO-220 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase = 25°C Junction Temperature Operating and Storage Temperature Range Telephone (01455) 556565.