• Part: D1036UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 28.70 KB
Download D1036UK Datasheet PDF
Seme LAB
D1036UK
D1036UK is METAL GATE RF SILICON FET manufactured by Seme LAB.
- SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - HF/VHF/UHF MUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 175W BVDSS Drain - Source Breakdown Voltage 70V BVGSS Gate - Source Breakdown Voltage ±20V ID(sat) Drain Current 25A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C...