• Part: D2022UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 46.71 KB
Download D2022UK Datasheet PDF
Seme LAB
D2022UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - VERY LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - VHF/UHF MUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 125W BVDSS Drain - Source Breakdown Voltage - 65V BVGSS Gate - Source Breakdown Voltage - ±20V ID(sat) Drain Current - 5A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C - Per Side Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Ltd. Telephone +44(0)1455 556565. Fax...