• Part: D2026UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 25.31 KB
Download D2026UK Datasheet PDF
Seme LAB
D2026UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 17 d B MINIMUM DIM mm A 26.16 45° Tol. 0.38 0.13 5° 0.13 0.02 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF APPLICATIONS - VHF/UHF MUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 29W BVDSS Drain - Source Breakdown Voltage 65V BVGSS Gate - Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C...