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SML100S13 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML100S13
Manufacturer Seme LAB
File Size 20.56 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML100S13 D3PAK Package Outline. Dimensions in mm (inches) 4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 15.95 (0.628) 16.05 (0.632) 13.41 (0.528) 13.51 (0.532) 1.04 (0.041) 1.15 (0.045) 13.79 (0.543) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08 (0.082) 5.45 (0.215) BSC 2 plcs. 11.51 (0.453) 11.61 (0.457) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 1.27 (0.050) 1.40 (0.055) 3.81 (0.150) 4.06 (0.160) 2.67 (0.105) 2.84 (0.112) VDSS 1000V 13A ID(cont) RDS(on) 0.860W Pin 3 – Source Pin 1 – Gate Pin 2 – Drain Heatsink is Drain. • • • • Faster Switching Lower Leakage 100% Avalanche Tested Surface Mount D3PAK Package D StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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