SML1201B8 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Seme LAB

Datasheet Details

Part number	SML1201B8
Manufacturer	Seme LAB
File Size	21.13 KB
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet	SML1201B8 Datasheet

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SML1201B8 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) VDSS 1200V 8A ID(cont) RDS(on) 1.600W • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–247 Package 2.21 (0.087) 2.59 (0.102) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) M ax. 5.25 (0.215) BSC Pin 1 – Gate Pin 2 – Drain Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.