SML120L16 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Seme LAB

Datasheet Details

Part number	SML120L16
Manufacturer	Seme LAB
File Size	20.12 KB
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet	SML120L16 Datasheet

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SML120L16 TO–264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) 3.10 (0.122) 3.48 (0.137) 5.79 (0.228) 6.20 (0.244) 25.48 (1.003) 26.49 (1.043) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) VDSS 1200V 16A ID(cont) RDS(on) 0.800W • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–264 Package 0.48 (0.019) 0.84 (0.033) 2.59 (0.102) 3.00 (0.118) 19.81 (0.780) 21.39 (0.842) Pin 1 – Gate Pin 2 – Drain 2.29 (0.090) 2.69 (0.106) 0.76 (0.030) 1.30 (0.051) 5.45 (0.215) BSC 2 plcs. Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.