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SML30L76 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML30L76
Manufacturer Seme LAB
File Size 20.12 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet download datasheet SML30L76 Datasheet

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SML30L76 TO–264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) 3.10 (0.122) 3.48 (0.137) 5.79 (0.228) 6.20 (0.244) 25.48 (1.003) 26.49 (1.043) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) VDSS 300V 76A ID(cont) RDS(on) 0.040W • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–264 Package 0.48 (0.019) 0.84 (0.033) 2.59 (0.102) 3.00 (0.118) 19.81 (0.780) 21.39 (0.842) Pin 1 – Gate Pin 2 – Drain 2.29 (0.090) 2.69 (0.106) 0.76 (0.030) 1.30 (0.051) 5.45 (0.215) BSC 2 plcs. Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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