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SML50C15
TO–254 Package Outline.
Dimensions in mm (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050)
30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
20.07 (0.790) 20.32 (0.800)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1
2
3
VDSS 500V ID(cont) 15A RDS(on) 0.270W
0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC
3.81 (0.150) BSC
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• • • •
Faster Switching Lower Leakage 100% Avalanche Tested TO–254 Hermetic Package
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.