SML50C15
SML50C15 is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Seme LAB.
TO- 254 Package Outline.
Dimensions in mm (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050)
30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
20.07 (0.790) 20.32 (0.800)
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 500V ID(cont) 15A RDS(on) 0.270W
0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC
3.81 (0.150) BSC
Pin 1
- Drain
Pin 2
- Source
Pin 3
- Gate
- -
- -
Faster Switching Lower Leakage 100% Avalanche Tested TO- 254 Hermetic Package
Star MOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. Star MOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
- Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
- Source Voltage Gate
- Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
500 15 60 ±30 ±40 140 2
- 55 to 150 300 20 30 960
V A A V W W/°C °C A m J
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 4) Starting TJ = 25°C, L = 4.8m H, RG = 25W, Peak IL = 20A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
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STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain
- Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate
- Source Leakage Current Gate Threshold Voltage On State Drain Current 2...
