SML50L47 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Seme LAB

Datasheet Details

Part number	SML50L47
Manufacturer	Seme LAB
File Size	24.90 KB
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet	SML50L47 Datasheet

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SML50L47 TO–264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) 3.10 (0.122) 3.48 (0.137) 5.79 (0.228) 6.20 (0.244) 25.48 (1.003) 26.49 (1.043) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) VDSS 500V ID(cont) 44A RDS(on) 0.100W • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–264 Package 0.48 (0.019) 0.84 (0.033) 2.59 (0.102) 3.00 (0.118) 19.81 (0.780) 21.39 (0.842) Pin 1 – Gate Pin 2 – Drain 2.29 (0.090) 2.69 (0.106) 0.76 (0.030) 1.30 (0.051) 5.45 (0.215) BSC 2 plcs. Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.

Published: Apr 16, 2005 |