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SML50T47 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Datasheet Details

Part number SML50T47
Manufacturer Seme LAB
File Size 19.81 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML50T47 T247clipPackage Outline. Dimensions in mm (inches) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 2 1 2 3 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) VDSS 500V 47A ID(cont) RDS(on) 0.100W • • • • Faster Switching Lower Leakage 100% Avalanche Tested New T247clip Package (Clip–mounted TO–247 Package) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) MAX 2.21 (0.087) 2.59 (0.102) 5.45 (0.215) BSC 2plcs Pin 1 – Gate Pin 2 – Drain Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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