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SML60S16 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML60S16
Manufacturer Seme LAB
File Size 20.60 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML60S16 D3PAK Package Outline. Dimensions in mm (inches) 4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 15.95 (0.628) 16.05 (0.632) 13.41 (0.528) 13.51 (0.532) 1.04 (0.041) 1.15 (0.045) 13.79 (0.543) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08 (0.082) 5.45 (0.215) BSC 2 plcs. 11.51 (0.453) 11.61 (0.457) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 1.27 (0.050) 1.40 (0.055) 3.81 (0.150) 4.06 (0.160) 2.67 (0.105) 2.84 (0.112) VDSS 600V 16A ID(cont) RDS(on) 0.400W Pin 3 – Source Pin 1 – Gate Pin 2 – Drain Heatsink is Drain. • • • • Faster Switching Lower Leakage 100% Avalanche Tested Surface Mount D3PAK Package D StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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