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SML60S18 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML60S18
Manufacturer Seme LAB
File Size 19.73 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML60S18 D3PAK Package Outline. Dimensions in mm (inches) 4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 15.95 (0.628) 16.05 (0.632) 13.41 (0.528) 13.51 (0.532) 1.04 (0.041) 1.15 (0.045) 13.79 (0.543) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08 (0.082) 5.45 (0.215) BSC 2 plcs. 11.51 (0.453) 11.61 (0.457) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 1.27 (0.050) 1.40 (0.055) 3.81 (0.150) 4.06 (0.160) 2.67 (0.105) 2.84 (0.112) VDSS ID(cont) RDS(on) Pin 3 – Source 600V 18A 0.35Ω Pin 1 – Gate Pin 2 – Drain Heatsink is Drain. • • • • Faster Switching Lower Leakage 100% Avalanche Tested Surface Mount D3PAK Package D StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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