SML80H14
SML80H14 is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Seme LAB.
TO- 258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035)
17.96 (0.707) 17.70 (0.697)
13.84 (0.545) 13.58 (0.535)
1 2 3
4.19 (0.165) 3.94 (0.155) Dia.
21.21 (0.835) 20.70 (0.815)
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 800V 13.5A ID(cont) RDS(on) 0.580Ω
3.56 (0.140) BSC
19.05 (0.750) 12.70 (0.500)
5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ.
Pin 1
- Drain
Pin 2
- Source
Pin 3
- Gate
- Faster Switching
- Lower Leakage
- TO- 258 Hermetic Package
Star MOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. Star MOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
- Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
- Source Voltage Gate
- Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
800 13.5 54 ±30 ±40 250 2.0
- 55 to 150 300 13.5 30 1300
V A A V W W/°C °C A m J
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 14.27m H, RG = 25Ω, Peak IL = 13.5A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://.semelab.co.uk E-mail: sales@semelab.co.uk
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STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain
- Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V)...
