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SML80L27 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML80L27
Manufacturer Seme LAB
File Size 20.12 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML80L27 TO–264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) 3.10 (0.122) 3.48 (0.137) 5.79 (0.228) 6.20 (0.244) 25.48 (1.003) 26.49 (1.043) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) VDSS 800V 27A ID(cont) RDS(on) 0.300W • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–264 Package 0.48 (0.019) 0.84 (0.033) 2.59 (0.102) 3.00 (0.118) 19.81 (0.780) 21.39 (0.842) Pin 1 – Gate Pin 2 – Drain 2.29 (0.090) 2.69 (0.106) 0.76 (0.030) 1.30 (0.051) 5.45 (0.215) BSC 2 plcs. Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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