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SML80T27 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML80T27
Manufacturer Seme LAB
File Size 19.75 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML80T27 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 2 1 2 3 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) VDSS 800V 27A ID(cont) RDS(on) 0.300W • • • • Faster Switching Lower Leakage 100% Avalanche Tested New T247clip Package (Clip–mounted TO–247 Package) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) MAX 2.21 (0.087) 2.59 (0.102) 5.45 (0.215) BSC 2plcs Pin 1 – Gate Pin 2 – Drain Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
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