Datasheet4U.com

BUX10 Datasheet PDF

Semelab BUX10

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

Part No. BUX10
Datasheet BUX10 Download
Manufacturer
Semelab
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Buy Stock & Price
BUX10 datasheet page 1 preview

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 160V VCEX Collector – Emitter Voltage VBE = -1.5V 160V VCEO Collector – Emitter Voltage 125V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 25A ICM Peak Collector Current tp = 10ms 30A IB Base Current 5A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 0.85W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.17 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and
BUX10 page 2 preview BUX10 page 3 preview