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BUX10 Datasheet High Power NPN Silicon Transistor

Manufacturer: STMicroelectronics

Overview: ® BUX10 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED APPLICATIONS s MOTOR CONTROL s LINEAR AND SWITCHING.

General Description

The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEX VCEO VEBO IC ICM IB Ptot Tstg Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (VBE = - 1.5V) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Collector Peak Current (tP < 10 ms) Base Current Total Power Dissipation at Tcase Storage Temperature ≤ 25 oC Max Operating Junction Temperature March 2003 Value 160 160 125 7 25 30 5 150 -65 to 200 200 Unit V V V V A A A W oC oC 1/4 BUX10 THERMAL DATA Rthj-case Thermal Resistance Junct

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