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BUX10P Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BUX10P.

General Description

·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 160 V 125 V 7 V 25 A 30 A 5 A 150 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX10P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;

BUX10P Distributor