TT BUX10
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
| Part No. | BUX10 |
|---|---|
| Datasheet | BUX10 Download |
| Manufacturer |  TT |
| Description | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 160V VCEX Collector – Emitter Voltage VBE = -1.5V 160V VCEO Collector – Emitter Voltage 125V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 25A ICM Peak Collector Current tp = 10ms 30A IB Base Current 5A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 0.85W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.17 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
