BUX12 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	BUX12
Manufacturer	TT Electronics
File Size	188.15 KB
Description	SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Datasheet	BUX12 Datasheet

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 300V VCEX Collector – Emitter Voltage VBE = -1.5V 300V VCEO Collector – Emitter Voltage 250V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 20A ICM Peak Collector Current tp = 10ms 25A IB Base Current 4A PD Total Power Dissipation at TC = 25°C 110W Derate Above 25°C 0.63W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min.