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isc Silicon NPN Power Transistor
BUX10A
DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for control amplifiers and power switching circuits,
such as converters, inverters, switching regulators, and switching-control amplifiers.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCER VCEX VCEO
Collector-Base Voltage
Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.