Download BUX10A Datasheet PDF
Inchange Semiconductor
BUX10A
BUX10A is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - High Switching Speed - High Current Capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for control amplifiers and power switching circuits, such as converters, inverters, switching regulators, and switching-control amplifiers. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL...