HCT90R1K4 Datasheet | SemiHow

Features - Very Low FOM (RDS(on) X Qg) - Extremely low switching loss - Excellent stability and uniformity - 100% Avalanche Tested - Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 950 4.2 1.4 10.3 Unit V A Ω n C Application - Switch Mode Power Supply (SMPS) - TV power & LED Lighting Power - AC to DC Converters Package & Internal Circuit SOT-223-2L Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS VGS IDM1) EAS2) IAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current MOSFET dv/dt ruggedness, VDS=0…400V dv/dt PD TJ, TSTG Reverse diode dv/dt, VDS=0…400V, IDS≤ID Power Dissipation (TC = 25℃) Operating and Storage Temperature Range - Drain current limited by maximum junction temperature Value 900 ±20 4.2 -...