HCT90R1K4 - 900V N-Channel Super Junction MOSFET

Features

Very Low FOM (RDS(on) X Qg).
Extremely low switching loss.
Excellent stability and uniformity.
100% Avalanche Tested.
Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 950 4.2 1.4 10.3 Unit V A Ω nC.

SemiHow

Datasheet Details

Part number	HCT90R1K4
Manufacturer	SemiHow
File Size	215.57 KB
Description	900V N-Channel Super Junction MOSFET
Datasheet	HCT90R1K4 Datasheet
Additional preview pages of the HCT90R1K4 datasheet.

📁 Similar Datasheet

HCT9046 - 74HCT9046 (Philips)
HCT-1-152-15L - Self Leaded Power Inductors (Coilcraft)
HCT-2-152-15L - Self Leaded Power Inductors (Coilcraft)
HCT04 - Hex Inverter (System Logic Semiconductor)
HCT10 - Triple 3-Input NAND Gate (System Logic Semiconductor)
HCT100-xxxx-OL - Current Transformers & Sensors (Premo)
HCT200-xxxx-OL - Current Transformers & Sensors (Premo)
HCT240 - Octal 3-State Inverting Buffer/Line Driver/Line Receiver (System Logic Semiconductor)
HCT244 - Octal 3-State Noninverting Buffer/Line Driver/Line Receiver (System Logic Semiconductor)
HCT273 - Octal D Flip-Flop with Common Clock/Reset (Motorola Inc)

Other Datasheets by SemiHow

HCT70R1K1 - 700V N-Channel Super Junction MOSFET
HCT70R1K6 - 700V N-Channel Super Junction MOSFET

Full PDF Text Transcription

Click to expand full text

HCT90R1K4 Super Junction MOSFET Dec 2019 HCT90R1K4 900V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 950 4.2 1.4 10.

Published: Nov 5, 2024 |