SemiHow HCT90R1K4
900V N-Channel Super Junction MOSFET
| Part No. | HCT90R1K4 |
|---|---|
| Datasheet | HCT90R1K4 Download |
| Manufacturer |  SemiHow |
| Description | 900V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
● Very Low FOM (RDS(on) X Qg)● Extremely low switching loss
● Excellent stability and uniformity
● 100% Avalanche Tested
● Built-in ESD Diode
KEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 950 4.2 1.4 10.3 Unit V A Ω nC Application● Switch Mode Power Supply (SMPS)
● TV power & LED Lighting Power
● AC to DC Converters Package & Internal Circuit SOT-223-2L D S G
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter VDSS VGS ID IDM1) EAS2) IAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current MOSFET dv/dt ruggedness, VDS=0…400V dv/dt PD TJ, TSTG Reverse diode dv/dt, VDS=0…400V, IDS≤ID Power Dissipation (TC = 25℃) Operating and Storage Temperature Range * Drain current limited by maximum junction temperature Value 900 ±20 4.2 * 2.7 * 12.6 * 52 1.1 50 15 6.5 -55 to +150 Unit V V A A A mJ A V/ns V/ns W ℃ Thermal Resistance Characteristics Symbol RθJS RθJA Parameter Thermal Resistance, Junction-to-Solder point, Max.
