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HCT90R1K4 - 900V N-Channel Super Junction MOSFET

Key Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 950 4.2 1.4 10.3 Unit V A Ω nC.

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Datasheet Details

Part number HCT90R1K4
Manufacturer SemiHow
File Size 215.57 KB
Description 900V N-Channel Super Junction MOSFET
Datasheet download datasheet HCT90R1K4 Datasheet

Full PDF Text Transcription for HCT90R1K4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HCT90R1K4. For precise diagrams, and layout, please refer to the original PDF.

HCT90R1K4 Super Junction MOSFET Dec 2019 HCT90R1K4 900V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent ...

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ery Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 950 4.2 1.4 10.

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