HCU7N70S - N-Channel MOSFET

Product Overview

SemiHow

Part number	HCU7N70S
Manufacturer	SemiHow
File Size	287.54 KB
Description	N-Channel MOSFET
Datasheet	HCU7N70S Datasheet
Additional preview pages of the HCU7N70S datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ7S#9GS=10V 100% Avalanche Tested Sep 2014 BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5.0 A I-PAK 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS D.

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Published: Apr 14, 2017 |