Full PDF Text Transcription for HFD5N70S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HFD5N70S. For precise diagrams, and layout, please refer to the original PDF.
HFD5N70S_HFU5N70S Jan 2013 HFD5N70S / HFU5N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ȍ ID = 3.8 A FEATURES Originative New Design Superior Avalanche R...
View more extracted text
ȍ ID = 3.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N70S 1 2 3 HFU5N70S 1.Gate 2. Drain 3.