Datasheet Summary
600V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7S#9GS=10V 100% Avalanche Tested
Feb 2013
BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A
TO-220
1 23
1.Gate 2. Drain 3....