Datasheet Summary
600V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.64 Ω (Typ.) @VGS=10V
Nov 2005
BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A
TO-220
1 2 3
1.Gate 2. Drain 3....