HFP10N65S Description
HFP10N65S March 2014 HFP10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.5.
HFP10N65S Key Features
- Originative New Design
- Superior Avalanche Rugged Technology
- Robust Gate Oxide Technology
- Very Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Unrivalled Gate Charge : 29 nC (Typ.)
- Extended Safe Operating Area
- Lower RDS(ON) ȍ 7S #9GS=10V
- 100% Avalanche Tested