Full PDF Text Transcription for HFP10N65U (Reference)
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HFP10N65U HFP10N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Cap...
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ged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ 7S #9GS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A TO-220 1 23 1.Gate 2. Drain 3.
HFP10N65U Datasheet
