SemiHow HFP10N65U
N-Channel MOSFET
| Part No. | HFP10N65U |
|---|---|
| Datasheet | HFP10N65U Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ 7\S #9GS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A TO-220 1 23 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 9.5 6.0 38 ρ30 470 9.5 16.4 4.5 PD Power Dissipation (TC = 25) - Derate above 25 164 1.32 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purpos...
