Datasheet Summary
Nov 2007
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A
Features q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ.) q Extended Safe Operating Area q Lower RDS(ON) : 0.67 Ω (Typ.) @VGS=10V q 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3....