HFP50N06 - 60V N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ. ) ) RDS(on) = 22 mΩ ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Extended Safe Operating Area Lower RDS(ON) : 0.018 Ω (Typ. ) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Dr.

HFP50N06 60v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP50N06
Manufacturer	SemiHow
File Size	348.06 KB
Description	60V N-Channel MOSFET
Datasheet	HFP50N06 Datasheet

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www.DataSheet4U.com HFP50N06 July 2005 BVDSS = 60 V HFP50N06 60V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.) ) RDS(on) = 22 mΩ ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Extended Safe Operating Area Lower RDS(ON) : 0.018 Ω (Typ.