Datasheet Summary
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July 2005
BVDSS = 60 V
60V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.) )
RDS(on) = 22 mΩ ID = 50 A
TO-220
1.Gate 2. Drain 3. Source
Extended Safe Operating Area Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V 100% Avalanche...
