Datasheet Summary
Oct 2015
60V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 27 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested
BVDSS = 60 V RDS(on) typ = 18 Pȍ ID = 50 A
TO-220
1 2 3
1.Gate 2. Drain 3....
