HFP5N60F - 600V N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR.

HFP5N60F 600v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP5N60F
Manufacturer	SemiHow
File Size	198.65 KB
Description	600V N-Channel MOSFET
Datasheet	HFP5N60F Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFP5N80	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP50N06	N-Channel MOSFET	Shantou Huashan
HFP50N06V	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP13N10	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP13N50	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number	Description
HFP5N60S	N-Channel MOSFET
HFP5N60U	N-Channel MOSFET
HFP5N65F	N-Channel MOSFET
HFP5N65S	N-Channel MOSFET
HFP5N65U	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HFP5N60F Nov 2015 HFP5N60F 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 5 A TO-220 1 2 3 1.Gate 2. Drain 3.