Datasheet Summary
Oct 2009
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 2.3 ȍ ID = 4.2 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.3 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 23
1.Gate 2. Drain 3....