Datasheet Summary
600V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
May 2012
BVDSS = 600 V RDS(on) typ ȍ ID = 4.5 A
TO-220
1 23
1.Gate 2. Drain 3....