Full PDF Text Transcription for HFS6N60U (Reference)
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HFS6N60U. For precise diagrams, and layout, please refer to the original PDF.
HFS6N60U HFS6N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capac...
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d Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested July 2012 BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A TO-220F 12 3 1.Gate 2. Drain 3.
HFS6N60U Datasheet
