Full PDF Text Transcription for HFS6N70U (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HFS6N70U. For precise diagrams, and layout, please refer to the original PDF.
HFS6N70U HFS6N70U 700V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capac...
View more extracted text
d Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ 7S #9GS=10V 100% Avalanche Tested March 2013 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A TO-220F 12 3 1.Gate 2. Drain 3.