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HFS6N70U - N-Channel MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.8 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VG.

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Datasheet Details

Part number HFS6N70U
Manufacturer SemiHow
File Size 306.57 KB
Description N-Channel MOSFET
Datasheet download datasheet HFS6N70U Datasheet

Full PDF Text Transcription for HFS6N70U (Reference)

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HFS6N70U HFS6N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capac...

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d Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.8 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A TO-220F 12 3 1.Gate 2. Drain 3.