Full PDF Text Transcription for HFS6N65U (Reference)
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HFS6N65U. For precise diagrams, and layout, please refer to the original PDF.
HFS6N65U HFS6N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capac...
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d Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested July 2012 BVDSS = 650 V RDS(on) typ ȍ ID = 6.0 A TO-220F 12 3 1.Gate 2. Drain 3.
HFS6N65U Datasheet
