SemiHow HFS830
N-Channel MOSFET
| Part No. | HFS830 |
|---|---|
| Datasheet | HFS830 Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● Superior Avalanche Rugged Technology
● Robust Gate Oxide Technology
● Very Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Unrivalled Gate Charge : 18 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V
● 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 500 4.5*...
