HFS830 - N-Channel MOSFET

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SemiHow

Part number	HFS830
Manufacturer	SemiHow
File Size	794.14 KB
Description	N-Channel MOSFET
Datasheet	HFS830 Datasheet
Additional preview pages of the HFS830 datasheet.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Published: Jun 7, 2015 |