HFS9N50 - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFS9N50 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS9N50
Manufacturer	SemiHow
File Size	162.98 KB
Description	N-Channel MOSFET
Datasheet	HFS9N50 Datasheet

Full PDF Text Transcription for HFS9N50 (Reference)

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HFS9N50 Mar 2008 HFS9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 9.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Ro...

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S Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3.

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