Datasheet Summary
HFP9N80_HFS9N80
Oct 2016
HFP9N80 / HFS9N80
800V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS pliant
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 800 9 1.2 48
HFP9N80 TO-220
HFS9N80 TO-220F
Symbol
Unit V A ȍ...