Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 800 9 1.2 48
HFP9N80 TO-220
HFS9N80 TO-220F
Symbol
Unit V A ȍ nC
S D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Dra.
Full PDF Text Transcription for HFS9N80 (Reference)
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HFP9N80_HFS9N80 Oct 2016 HFP9N80 / HFS9N80 800V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capac...
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d Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 9 1.
HFS9N80 Datasheet
