Full PDF Text Transcription for HFU6N40S (Reference)
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HFU6N40S. For precise diagrams, and layout, please refer to the original PDF.
HFD6N40S / HFU6N40S July 2009 HFD6N40S / HFU6N40S 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 0.83 Ω ID = 4.5 A FEATURES Originative New Design Superior Avalanc...
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0.83 Ω ID = 4.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.83 Ω (Typ.) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD6N40S 1 2 3 HFU6N40S 1.Gate 2. Drain 3.
HFU6N40S Datasheet
