Datasheet4U.com

HFW75N75 Datasheet PDF

SemiHow HFW75N75

75V N-Channel MOSFET

Part No. HFW75N75
Datasheet HFW75N75 Download
Manufacturer
SemiHow
Description 75V N-Channel MOSFET
Buy Stock & Price
HFW75N75 datasheet page 1 preview

FEATURES

● Originative New Design
● Superior Avalanche Rugged Technology
● Robust Gate Oxide Technology
● Very Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Unrivalled Gate Charge : 77 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 0.0105 Ω (Typ.) @VGS=10V
● 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS

TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 75 80 56 320 ±20 1476 80 16 7.0 PD TJ, TSTG TL Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 3.75...
HFW75N75 page 2 preview HFW75N75 page 3 preview