Full PDF Text Transcription for HFW7N80 (Reference)
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HFW7N80. For precise diagrams, and layout, please refer to the original PDF.
HFW7N80_HFI7N80 Dec 2015 HFW7N80 / HFI7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 7.0 A FEATURES Originative New Design Superior Avalanche Rugg...
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ID = 7.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW7N80 HFI7N80 1.Gate 2. Drain 3.
HFW7N80 Datasheet
