SemiHow HFW7N80
800V N-Channel MOSFET
| Part No. | HFW7N80 |
|---|---|
| Datasheet | HFW7N80 Download |
| Manufacturer |  SemiHow |
| Description | 800V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW7N80 HFI7N80 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 7.0 4.4 28 ρ30 580 7.0 16.7 4.5 Power Dissipation (TA = 2
