HRP80N06K - 60V N-Channel Trench MOSFET

Product Overview

SemiHow

Part number	HRP80N06K
Manufacturer	SemiHow
File Size	959.62 KB
Description	60V N-Channel Trench MOSFET
Datasheet	HRP80N06K Datasheet
Additional preview pages of the HRP80N06K datasheet.

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 90 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 6.3 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 6.3mΩ ID = 114 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.

📁 Similar Datasheet

HRP01 - Relative Pressure Sensor (HOPERF)
HRP160306-CSC3 - SMD Type Red Emitter (CT Micro)
HRP22 - Silicon Schottky Barrier Diode for Rectifying (Hitachi Semiconductor)
HRP2540 - Power Rectifier/Power Surge Suppressor (Intersil Corporation)
HRP32 - Silicon Schottky Barrier Diode for Rectifying (Hitachi Semiconductor)
HRP5 - LSI Assembly (Rohm)
HRP5022X - Shielded Power Inductors (BOURNS)
HRP5022X-2R2M - Shielded Power Inductors (BOURNS)

Other Datasheets by SemiHow

Published: Apr 14, 2017 |