The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HRD120N10K_HRU120N10K
HRD120N10K / HRU120N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested
Sep 2015
BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A
D-PAK I-PAK
2
1 3
HRD120N10K
1 2 3
HRU120N10K
1.Gate 2. Drain 3.