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HRU80N06K - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 90 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 6.3 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 6.3mΩ ID = 114 A D-PAK I-PAK 2 1 3 HRD80N06K 1 2 3 HRU80N06K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source.

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Datasheet Details

Part number HRU80N06K
Manufacturer SemiHow
File Size 0.95 MB
Description N-Channel MOSFET
Datasheet download datasheet HRU80N06K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HRD80N06K_HRU80N06K HRD80N06K / HRU80N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 90 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 6.3 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 6.3mΩ ID = 114 A D-PAK I-PAK 2 1 3 HRD80N06K 1 2 3 HRU80N06K 1.Gate 2. Drain 3.