HRU50N06K - N-Channel MOSFET

Product Overview

SemiHow

Part number	HRU50N06K
Manufacturer	SemiHow
File Size	767.85 KB
Description	N-Channel MOSFET
Datasheet	HRU50N06K Datasheet
Additional preview pages of the HRU50N06K datasheet.

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 11.5 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 11.5mΩ ID = 40 A D-PAK I-PAK 2 1 3 HRD50N06K 1 2 3 HRU50N06K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source.

📁 Similar Datasheet

HRU0103A - Silicon Schottky Barrier Diode for Rectifying (Hitachi Semiconductor)
HRU0203A - Silicon Schottky Barrier Diode for Rectifying (Hitachi Semiconductor)
HRU0302 - Silicon Schottky Barrier Diode for Rectifying (Hitachi Semiconductor)
HRU0302A - Silicon Schottky Barrier Diode for Rectifying (Hitachi Semiconductor)
HRU100120 - RHRU100120 (Intersil Corporation)

Other Datasheets by SemiHow

Published: Mar 26, 2016 |