SemiHow HRU50N06K
N-Channel MOSFET
| Part No. | HRU50N06K |
|---|---|
| Datasheet | HRU50N06K Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● Superior Avalanche Rugged Technology
● Excellent Switching Characteristics
● Unrivalled Gate Charge : 40 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 11.5 mΩ (Typ.) @VGS=10V
● 100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 11.5mΩ ID = 40 A D-PAK I-PAK 2 1 3 HRD50N06K 1 2 3 HRU50N06K 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ 60 40 * 28 * 140 * ±20 145 3.9 3 39 0.26 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited...
