SemiMOS SM16N65C
650V N-Channel MOSFET
| Part No. | SM16N65C |
|---|---|
| Datasheet | SM16N65C Download |
| Manufacturer | SemiMOS |
| Description | 650V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg= 48.5nC (Typ.). □ BVDSS=650V,ID=16A □ RDS(on) : 0.56 Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S)ABSOLUTE MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage ID Drain Current TC=25℃ TC=100℃ VGS(TH) Gate Threshold Voltage EAS Single Pulse Avalanche Energy (note1) IAR Avalanche Current (note2) PD Power Dissipation (Tc=25℃) Tj Junction Temperature(Max) Tstg Storage Temperature TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 650 16 9.5 ±30 920 16 68 150 -55~+150 300 Unit V A V mJ A W ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance,Junction to Case - RθJA Thermal Resistance,Junction to Ambient - 2.2 ℃/W 62.5 1 SM16N65C 650V N-Channel MOSFETELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise noted) Symbol Parameter Test Condition Min.
