SM16N65C - 650V N-Channel MOSFET

Key Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 48.5nC (Typ. ).
BVDSS=650V,ID=16A.
RDS(on) : 0.56 Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage ID Drain Current TC=25℃ TC=100℃ VGS(TH) Gate Threshold Voltage EAS Single.

SM16N65C 650v n-channel mosfet by SemiMOS - Datasheet Preview

Datasheet Details

Part number	SM16N65C
Manufacturer	SemiMOS
File Size	1.23 MB
Description	650V N-Channel MOSFET
Datasheet	SM16N65C Datasheet

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SM16N65C 650V N-Channel MOSFET TO-220F SM16N65C KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg= 48.5nC (Typ.). □ BVDSS=650V,ID=16A □ RDS(on) : 0.56 Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage ID Drain Current TC=25℃ TC=100℃ VGS(TH) Gate Threshold Voltage EAS Single Pulse Avalanche Energy (note1) IAR Avalanche Current (note2) PD Power Dissipation (Tc=25℃) Tj Junction Temperature(Max) Tstg Storage Temperature TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 650 16 9.