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SM16N65C - 650V N-Channel MOSFET

Datasheet Summary

Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg= 48.5nC (Typ. ).
  • BVDSS=650V,ID=16A.
  • RDS(on) : 0.56 Ω (Max) @VG=10V.
  • 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage ID Drain Current TC=25℃ TC=100℃ VGS(TH) Gate Threshold Voltage EAS Single.

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Datasheet Details

Part number SM16N65C
Manufacturer SemiMOS
File Size 1.23 MB
Description 650V N-Channel MOSFET
Datasheet download datasheet SM16N65C Datasheet
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Full PDF Text Transcription

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SM16N65C 650V N-Channel MOSFET TO-220F SM16N65C KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg= 48.5nC (Typ.). □ BVDSS=650V,ID=16A □ RDS(on) : 0.56 Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage ID Drain Current TC=25℃ TC=100℃ VGS(TH) Gate Threshold Voltage EAS Single Pulse Avalanche Energy (note1) IAR Avalanche Current (note2) PD Power Dissipation (Tc=25℃) Tj Junction Temperature(Max) Tstg Storage Temperature TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 650 16 9.
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