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SM18N60S - 600V N-Channel MOSFET

Datasheet Summary

Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=75 nC (Typ. ).
  • BVDSS=600V,ID=18A.
  • RDS(on) : 0.40Ω (Max) @VG=10V.
  • 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 600 V TC=25℃ 18 TC=100℃ 12.5 A VGS(TH) Gat.

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Datasheet Details

Part number SM18N60S
Manufacturer SemiMOS
File Size 1.20 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet SM18N60S Datasheet
Additional preview pages of the SM18N60S datasheet.

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Full PDF Text Transcription

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SM18N60S 600V N-Channel MOSFET TO-220F SM18N60S KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=75 nC (Typ.). □ BVDSS=600V,ID=18A □ RDS(on) : 0.40Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 600 V TC=25℃ 18 TC=100℃ 12.
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