SemiMOS SM18N60S
600V N-Channel MOSFET
| Part No. | SM18N60S |
|---|---|
| Datasheet | SM18N60S Download |
| Manufacturer | SemiMOS |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=75 nC (Typ.). □ BVDSS=600V,ID=18A □ RDS(on) : 0.40Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S)ABSOLUTE MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 600 V TC=25℃ 18 TC=100℃ 12.5 A VGS(TH) Gate Threshold Voltage ±30 V EAS Single Pulse Avalanche Energy (note1) 687 mJ IAR Avalanche Current (note2) 18 A PD Power Dissipation (Tc=25℃) 60 W Tj Junction Temperature(Max) 150 Tstg Storage Temperature -55~+150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance,Junction to Case - 2.08 ℃/W RθJA Thermal Resistance,Junction to Ambient - 62.5 1 SM18N60S 600V N-Channel MOSFETELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise noted) Symbol Parameter Test Condition Min.
