Datasheet4U.com

SM18N60S - 600V N-Channel MOSFET

Product Overview

📥 Download Datasheet

SM18N60S 600V N-Channel MOSFET by SemiMOS - Datasheet Preview — Datasheet preview – SM18N60S

Datasheet Details

Part number	SM18N60S
Manufacturer	SemiMOS
File Size	1.20 MB
Description	600V N-Channel MOSFET
Datasheet	SM18N60S Datasheet
Additional preview pages of the SM18N60S datasheet.

Product details

Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=75 nC (Typ. ).
BVDSS=600V,ID=18A.
RDS(on) : 0.40Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 600 V TC=25℃ 18 TC=100℃ 12.5 A VGS(TH) Gat.

📁 Similar Datasheet

SM18 - SCHOTTKY BARRIER RECTIFIERS (Mospec Semiconductor)
SM18 - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR (MIC)
SM180 - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR (MIC)
SM1800 - SURFACE MOUNT GLASS PASSIVATED RECTIFIER (DACO SEMICONDUCTOR)
SM180A - Schottky Barrier Rectifiers (Leshan Radio Company)
SM180A - 1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (GW)
SM180A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR (MIC)
SM180AF - Schottky Barrier Rectifiers (Leshan Radio Company)

Other Datasheets by SemiMOS

SM10N60C - 600V N-Channel MOSFET
SM10N60S - 600V N-Channel MOSFET
SM12N60C - 600V N-Channel MOSFET
SM12N60S - 600V N-Channel MOSFET
SM13N50C - 500V N-Channel MOSFET
SM13N50S - 500V N-Channel MOSFET

Published: Mar 30, 2025 |